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Guangdong Huixin Electronics Technology Co., Ltd.

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BAS21 SOT-23 High Speed Switching Diode High Conductance for Automatic Insertion

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Guangdong Huixin Electronics Technology Co., Ltd.
City:dongguan
Province/State:guangdong
Country/Region:china
Contact Person:MsMarissa Wang
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China BAS21 SOT-23 High Speed Switching Diode High Conductance for Automatic Insertion wholesale
  • China BAS21 SOT-23 High Speed Switching Diode High Conductance for Automatic Insertion wholesale

BAS21 SOT-23 High Speed Switching Diode High Conductance for Automatic Insertion
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Brand Name :Huixin
Model Number :BAS21 SOT-23
Certification :ISO14001 ISO9001 IATF16949 UL
Place of Origin :China
MOQ :3000PCS
Payment Terms :T/T, Paypal, Cash
Delivery Time :2-4Weeks
Packaging Details :3000pcs/ Reel
Price :Negotiable
Supply Ability :1 billion pieces/ Month
Type :High Speed Switching Diode
Material :Silicon Diode
Package :BAS21 SOT-23
Package Type :Surface Mount Diode
MPQ :3000pcs
Sample Time :5-7Days
Lead Time :3-4Weeks
Sample :Free
Features :Small Package , Fast Switching Speed
Specifications :250V 200mA
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BAS21 SOT-23 High Speed Switching Diode

BAS21 SOT-23 High Speed Switching Diode High Conductance for Automatic Insertion
BAS21/ BAS21A/ BAS21C/ BAS21S
BAS21 Marking Code: JS
BAS21A Marking Code: JS2
BAS21C Marking Code: JS3
BAS21S Marking Code: JS4
BAS21 SOT-23 Datasheet.pdf
Specification Features:

  • Fast Switching Speed
  • Surface Mount Package Ideally Suited for Automatic Insertion
  • For General Purpose Switching Applications
  • High Conductance

Absolute Maximum Ratings and Characteristics at ( Ta=25℃unless otherwise specified )

Parameter Symbol Value

Units
Peak Reverse Voltage VRM 250

V
Reverse Voltage VR 250

V
Working Peak Reverse Voltage VRWM 250

V
Forward Continuous Currenet IFM 400

mA
Average Rectified Output Current IO 200

mA
Repetitive Peak Forward Current IFRM 625

mA
Non-repetitive Peak Forward Surge Current at t=1us IFSM 2.5

A
Power Dissipation PD 225

mW
Junction Temperature TJ 150

℃

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